@Article{MiglioriniAleBalLanFer:2014:DoDiEl,
               author = "Migliorini, Fernanda Lanzoni and Alegre, Marcela Dalprat and 
                         Baldan, Maur{\'{\i}}cio Ribeiro and Lanza, Marcos Roberto 
                         Vasconcelos and Ferreira, Neidenei Gomes",
          affiliation = "{Instituto Nacional de Pesquisas Espaciais (INPE)} and {Instituto 
                         Nacional de Pesquisas Espaciais (INPE)} and {Instituto Nacional de 
                         Pesquisas Espaciais (INPE)} and {Universidade de S{\~a}o Paulo 
                         (USP)} and {Instituto Nacional de Pesquisas Espaciais (INPE)}",
                title = "Doped diamond electrodes on titanium substrates with controlled 
                         sp2/sp3 hybridization at different boron levels",
              journal = "Thin Solid Films",
                 year = "2014",
               volume = "564",
                pages = "97--103",
             keywords = "titanium, diamond, chemical vapor deposition.",
             abstract = "Doped diamond films on titanium substrate were systematically 
                         studied by controlling their sp2/sp3 hybridization as well as 
                         their boron doping levels. Samples were grown by hot filament 
                         chemical vapor deposition technique at CH4 additions of 1, 2, 6 
                         and 10 sccmdiluted in H2 for a total flowrate of 200 sccm. For 
                         each CH4 concentration four doping levelswere studied. The boron 
                         sourcewas obtained froma constant flowof 40 sccmfor an additional 
                         H2 line passing through a bubbler containing the B2O3 dissolved in 
                         methanol with B/C ratios of 2000, 7000, 15,000, and 30,000 B/C 
                         ppm. Scanning electron microscopy images depicted well faceted 
                         films without cracks or delaminations. The sp2/sp3 ratio as purity 
                         index (PI) and the growth tendency index (GTI), associated to the 
                         TiC formation, were evaluated by Raman and X-ray spectra, 
                         respectively. GTI index was used in this work to analyze the 
                         competition between the diamond growth and TiC formation. It is 
                         also possible to associate the GTI index in terms of C/H ratio, 
                         sincewhen this ratio is increased, the GTI index also increased. A 
                         constant GTI increase was observed as a function of CH4 addition 
                         for the whole range of the boron doping studied. For PI, an 
                         optimized value was observed at 6 sccm of CH4 for the doping 
                         levels higher than 2000 ppm of B/C ratio.",
                  doi = "10.1016/j.tsf.2014.05.037",
                  url = "http://dx.doi.org/10.1016/j.tsf.2014.05.037",
                 issn = "0040-6090",
                label = "self-archiving-INPE-MCTI-GOV-BR",
             language = "en",
        urlaccessdate = "27 abr. 2024"
}